Elpida EBJ81UG8BBU0-GN-F 8GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 62

左右 29% 更低的延时
更快的写入速度，GB/s

9.1 7.0

测试中的平均数值

Samsung V-GeN D4S4GL30A16TS5 4GB

需要考虑的原因
Samsung V-GeN D4S4GL30A16TS5 4GB

报告一个错误

更快的读取速度，GB/s

16.7 13.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 62
读取速度，GB/s

13.2 16.7
写入速度，GB/s

9.1 7.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2302 1808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Corsair CMSX64GX4M2A2666C18 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB