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G Skill Intl F2-5300CL4-1GBSA 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

总分
star star star star star
G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

差异 规格 评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB 需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 52
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 1,479.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-5300CL4-1GBSA 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 27
  • 读取速度，GB/s
    4,226.4 left arrow 11.4
  • 写入速度，GB/s
    1,479.2 left arrow 11.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    590 left arrow 2062

G Skill Intl F2-5300CL4-1GBSA 1GB RAM的比较

G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Kingston KHX2400C12D4/8GX 8GB
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Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Kingston 9965516-112.A00LF 16GB
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Corsair CMK16GX4M2Z3600C20 8GB
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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内存RAM
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G Skill Intl F3-2800C12-8GTXDG 8GB
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Apacer Technology 78.DAGNN.4030B 16GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Crucial Technology BLS8G4S240FSD.M16FAD 8GB
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Kingston 9905702-150.A00G 8GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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