G Skill Intl F2-5300CL4-1GBSA 1GB vs Samsung M393A1G40EB1-CRC 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 10.5

测试中的平均数值

Samsung M393A1G40EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB

报告一个错误

更快的写入速度，GB/s

7.7 1,479.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung M393A1G40EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 52
读取速度，GB/s

4,226.4 10.5
写入速度，GB/s

1,479.2 7.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

590 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMD16GX4M2B3000C15 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905403-090.A01LF 4GB

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V-GEN D4H8GL32A8TS 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Patriot Memory (PDP Systems) PSD432G32002S 32GB

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Samsung M393B1K70CH0-YH9 8GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB