G Skill Intl F2-5300CL4-1GBSA 1GB vs Samsung V-GeN D4S8GL30A8TX5 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值

Samsung V-GeN D4S8GL30A8TX5 8GB

需要考虑的原因
Samsung V-GeN D4S8GL30A8TX5 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 52

左右 -126% 更低的延时
更快的写入速度，GB/s

11.7 1,479.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung V-GeN D4S8GL30A8TX5 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 23
读取速度，GB/s

4,226.4 16.8
写入速度，GB/s

1,479.2 11.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

590 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Corsair CMK8GX4M1Z3600C18 8GB

Corsair CMK8GX4M1Z3600C18 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston HP24D4U7S1MBP-4 4GB

Kingston HP24D4U7S1MBP-4 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB