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Samsung M471B5273DH0-CH9 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB

Samsung M471B5273DH0-CH9 4GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 64
    左右 27% 更低的延时
Micron Technology 18ADF2G72AZ-2G6E1 16GB 需要考虑的原因
Micron Technology 18ADF2G72AZ-2G6E1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 64
  • 读取速度，GB/s
    9.3 left arrow 18.0
  • 写入速度，GB/s
    5.9 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 2197

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M471B5273DH0-CH9 4GB
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Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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内存RAM
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Corsair CMD16GX3M2A1866C9 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
内存RAM
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内存RAM
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Kingston 99U5471-012.A00LF 4GB
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A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology GD2.111881.002 4GB
Apacer Technology GD2.111881.002 4GB
内存RAM