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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-3000C15-4GVSB 4GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 11.7
    测试中的平均数值
G Skill Intl F4-3000C15-4GVSB 4GB 需要考虑的原因
G Skill Intl F4-3000C15-4GVSB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 45
    左右 -96% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3000C15-4GVSB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 23
  • 读取速度，GB/s
    6,336.8 left arrow 16.6
  • 写入速度，GB/s
    2,935.8 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2495

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

G Skill Intl F4-3000C15-4GVSB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
内存RAM
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX2933C17S4/32G 32GB
Kingston KHX2933C17S4/32G 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston XVTW4H-MIE 32GB
Kingston XVTW4H-MIE 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9965596-035.B00G 4GB
Kingston 9965596-035.B00G 4GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix GKE800SO51208-2133AH 8GB
SK Hynix GKE800SO51208-2133AH 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM