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G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston ACR26D4U9D8ME-16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Kingston ACR26D4U9D8ME-16 16GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 12.5
    测试中的平均数值
Kingston ACR26D4U9D8ME-16 16GB 需要考虑的原因
Kingston ACR26D4U9D8ME-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston ACR26D4U9D8ME-16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    6,336.8 left arrow 16.6
  • 写入速度，GB/s
    2,935.8 left arrow 12.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 3323

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Kingston ACR26D4U9D8ME-16 16GB RAM的比较

Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3466C19D4/16G 16GB
Kingston KHX3466C19D4/16G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Teikon TMA81GU6AFR8N-UHSC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3466C19D4/16G 16GB
Kingston KHX3466C19D4/16G 16GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
JUHOR JHD2666U1916JG 16GB
JUHOR JHD2666U1916JG 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
AMD R938G2130U2S 8GB
AMD R938G2130U2S 8GB
内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
V-GEN D4H4GL30A8TS5 4GB
V-GEN D4H4GL30A8TS5 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM