G Skill Intl F2-8500CL5-2GBPI 2GB vs Micron Technology 8ATF2G64HZ-3G2B2 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 46

左右 2% 更低的延时
更快的读取速度，GB/s

6 15.9

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2B2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2B2 16GB

报告一个错误

更快的写入速度，GB/s

9.8 2,935.8

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 46
读取速度，GB/s

6,336.8 15.9
写入速度，GB/s

2,935.8 9.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1144 2632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Crucial Technology BLS4G4D240FSB.8FADG 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Samsung M391A2K43BB1-CTD 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-4200C19-4GTZ 4GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

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Corsair CMD16GX4M2K4133C19 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMK8GX4M1A2400C14 8GB