G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung M378A1G44AB0-CWE 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 16.5

测试中的平均数值
更快的写入速度，GB/s

2,935.8 10.9

测试中的平均数值

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 45

左右 -18% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M378A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 38
读取速度，GB/s

6,336.8 16.5
写入速度，GB/s

2,935.8 10.9
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1144 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX32GX4M2A2400C16 16GB

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Qimonda 64T128020EDL2.5C2 1GB

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Samsung M391B5673EH1-CH9 2GB

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SK Hynix GKE160SO102408-2400 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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AMD R744G2606U1S 4GB

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Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

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Samsung M471B1G73QH0-YK0 8GB

AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

AMD R538G1601U2S 8GB

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SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB