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G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1G44BB0-CWE 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung M471A1G44BB0-CWE 8GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 60
    左右 25% 更低的延时
  • 更快的读取速度，GB/s
    6 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 11.0
    测试中的平均数值
Samsung M471A1G44BB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1G44BB0-CWE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 60
  • 读取速度，GB/s
    6,336.8 left arrow 15.3
  • 写入速度，GB/s
    2,935.8 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2359

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Samsung M471A1G44BB0-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMD128GX4M8A2666C15 16GB
Corsair CMD128GX4M8A2666C15 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965662-012.A01G 16GB
Kingston 9965662-012.A01G 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM