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G Skill Intl F3-10600CL9-2GBNT 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
需要考虑的原因
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
报告一个错误
更快的读取速度,GB/s
15
13.2
测试中的平均数值
更快的写入速度,GB/s
9.5
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
13.2
15.0
写入速度,GB/s
8.4
9.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2070
2932
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905665-009.A00G 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Kingston KP4T2F-PSB 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Kingston 9905403-447.A00LF 4GB
SK Hynix HMA425S6BJR6N-UH 2GB
Kingston KF552C40-16 16GB
Samsung SF4721G4CKHH6DFSDS 8GB
Kingston KHX2133C11D3/4GX 4GB
Avant Technology J642GU42J7240N2 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M393A1G40EB1-CPB 8GB
Kingston 9905471-002.A00LF 2GB
Kingston KH2400C15D4/8 8GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK4GX4M1A2400C14 4GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
报告一个错误
×
Bug description
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