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G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD32GX4M2C3200C14T 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Corsair CMD32GX4M2C3200C14T 16GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
Corsair CMD32GX4M2C3200C14T 16GB 需要考虑的原因
Corsair CMD32GX4M2C3200C14T 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 26
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD32GX4M2C3200C14T 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 20
  • 读取速度，GB/s
    13.2 left arrow 18.4
  • 写入速度，GB/s
    8.4 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3426

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Corsair CMD32GX4M2C3200C14T 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Mushkin 99[2/7/4]191[F/T] 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Kingston ACR16D3LU1MNG/4G 4GB
Kingston ACR16D3LU1MNG/4G 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
内存RAM