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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CB8GU2666.C8ET 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CB8GU2666.C8ET 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
Crucial Technology CB8GU2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GU2666.C8ET 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CB8GU2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    13.2 left arrow 15.0
  • 写入速度，GB/s
    8.4 left arrow 10.1
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2636

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology CB8GU2666.C8ET 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U8S8HC-8XR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
Corsair CMSX64GX4M2A3200C22 32GB
Corsair CMSX64GX4M2A3200C22 32GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Kingston 9905630-018.A00G 8GB
Kingston 9905630-018.A00G 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9965589-008.D01G 8GB
Kingston 9965589-008.D01G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston KST-2133MHZ-4G 4GB
Kingston KST-2133MHZ-4G 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD16GX4M2E4000C19 8GB
Corsair CMD16GX4M2E4000C19 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM