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G Skill Intl F3-10600CL9-2GBNT 2GB
Golden Empire CL16-20-20 D4-3200 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Golden Empire CL16-20-20 D4-3200 16GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 21% 更低的延时
Golden Empire CL16-20-20 D4-3200 16GB 需要考虑的原因
Golden Empire CL16-20-20 D4-3200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Golden Empire CL16-20-20 D4-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 33
  • 读取速度，GB/s
    13.2 left arrow 16.9
  • 写入速度，GB/s
    8.4 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3041

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Golden Empire CL16-20-20 D4-3200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMR32GX4M4D3000C16 8GB
Corsair CMR32GX4M4D3000C16 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD64GX4M4B3466C16 16GB
Corsair CMD64GX4M4B3466C16 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C14-16GVK 16GB
G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
SK Hynix HMA82GR8AMR4N-TF 16GB
SK Hynix HMA82GR8AMR4N-TF 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
A-DATA Technology DDR4 2800 8GB
A-DATA Technology DDR4 2800 8GB
内存RAM