Samsung M378B5673FH0-CH9 2GB vs Shenzhen Xingmem Technology Corp 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 43

左右 19% 更低的延时
更快的读取速度，GB/s

14.4 14.3

测试中的平均数值
更快的写入速度，GB/s

9.5 7.8

测试中的平均数值

Shenzhen Xingmem Technology Corp 16GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Shenzhen Xingmem Technology Corp 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 43
读取速度，GB/s

14.4 14.3
写入速度，GB/s

9.5 7.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2321 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673FH0-CH9 2GB

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Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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G Skill Intl F4-3600C18-32GTZN 32GB

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Kingston 9905622-025.A00G 4GB

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PNY Electronics PNY 2GB

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Corsair CM4X8GD3200C16K4 8GB

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Mushkin 991679ES 996679ES 2GB

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Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Samsung M471A1G43DB0-CPB 8GB

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Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMD32GX4M2B2800C14 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB