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G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 15.6
  • 写入速度，GB/s
    8.4 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2687

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB RAM的比较

Crucial Technology CT51264BD160B.C16F 4GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
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内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Kingston 9905403-447.A00LF 4GB
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内存RAM
Samsung M471B1G73DB0-YK0 8GB
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内存RAM
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内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
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Corsair CMK32GX4M2A2400C16 16GB
内存RAM
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内存RAM
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Kingston 9905403-090.A01LF 4GB
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内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M1E3200C16 16GB
Corsair CMK16GX4M1E3200C16 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
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Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
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Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Corsair CMWX8GF2933Z19W8 8GB
内存RAM