G Skill Intl F3-10600CL9-2GBNT 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

17.7 13.2

测试中的平均数值
更快的写入速度，GB/s

12.7 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

13.2 17.7
写入速度，GB/s

8.4 12.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-036.A00G 4GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMSX64GX4M2A2933C19 32GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston ACR26D4S9S8HJ-8 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Teikon TMA451S6AFR8N-TFSC 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-37 512MB

Nanya Technology M2Y51264TU88B0B-37 512MB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Apacer Technology GD2.1542WS.001 8GB

Apacer Technology GD2.1542WS.001 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB