G Skill Intl F3-10600CL9-2GBNT 2GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 41% 更低的延时

SK Hynix HMA851S6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB

报告一个错误

更快的读取速度，GB/s

14.9 13.2

测试中的平均数值
更快的写入速度，GB/s

11.6 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

SK Hynix HMA851S6DJR6N-XN 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 44
读取速度，GB/s

13.2 14.9
写入速度，GB/s

8.4 11.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2070 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FAR2 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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A-DATA Technology DQVE1908 512MB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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Kingston 9905471-006.A01LF 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905678-043.A00G 8GB

Kingston 9905678-043.A00G 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB