Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston KVR24N17S8/4 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 15.4

测试中的平均数值
更快的写入速度，GB/s

11.8 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Kingston KVR24N17S8/4 4GB

需要考虑的原因
Kingston KVR24N17S8/4 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 51

左右 -143% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston KVR24N17S8/4 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 21
读取速度，GB/s

15.6 15.4
写入速度，GB/s

11.8 7.1
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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G Skill Intl F4-3000C14-8GVR 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Samsung M471A1K43DB1-CTD 8GB

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PNY Electronics PNY 2GB

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Chun Well Technology Holding Limited D4U0832161B 8GB

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Kingston ACR16D3LS1KBG/8G 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

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Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston ACR26D4U9S8MH-8 8GB