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G Skill Intl F3-12800CL7-4GBXM 4GB
Asgard VMA45UG-MIC1U22T2 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB vs Asgard VMA45UG-MIC1U22T2 8GB

总分
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分
star star star star star
Asgard VMA45UG-MIC1U22T2 8GB

Asgard VMA45UG-MIC1U22T2 8GB

差异 规格 评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 69
    左右 48% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 8.3
    测试中的平均数值
Asgard VMA45UG-MIC1U22T2 8GB 需要考虑的原因
Asgard VMA45UG-MIC1U22T2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 14.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-12800CL7-4GBXM 4GB
Asgard VMA45UG-MIC1U22T2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 69
  • 读取速度，GB/s
    14.8 left arrow 16.2
  • 写入速度，GB/s
    8.7 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2481 left arrow 1980

G Skill Intl F3-12800CL7-4GBXM 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB

Asgard VMA45UG-MIC1U22T2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
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内存RAM
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Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Chun Well Technology Holding Limited CL16-18-18 D4-3000
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