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G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

总分
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

差异 规格 评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB
报告一个错误
G Skill Intl F4-3200C16-16GTZKO 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKO 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 36
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 21
  • 读取速度，GB/s
    14.8 left arrow 18.7
  • 写入速度，GB/s
    8.7 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2481 left arrow 3437

G Skill Intl F3-12800CL7-4GBXM 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMR32GX4M2C3200C16 16GB
Corsair CMR32GX4M2C3200C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905734-059.A00G 16GB
Kingston 9905734-059.A00G 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905664-010.A00G 4GB
Kingston 9905664-010.A00G 4GB
内存RAM
Kingston 99U5315-023.A00LF 512MB
Kingston 99U5315-023.A00LF 512MB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3600C18-32GVK 32GB
G Skill Intl F4-3600C18-32GVK 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
内存RAM