Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 32

左右 25% 更低的延时

Chun Well Technology Holding Limited D4U0832160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB

报告一个错误

更快的读取速度，GB/s

20.5 16

测试中的平均数值
更快的写入速度，GB/s

14.5 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited D4U0832160B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 32
读取速度，GB/s

16.0 20.5
写入速度，GB/s

12.5 14.5
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Ramaxel Technology RMSA3320KE78HAF-3200 8GB

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Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB