G Skill Intl F3-12800CL7-4GBXM 4GB vs Micron Technology 18ASF1G72PZ-2G1A2 8GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 49

左右 27% 更低的延时
更快的读取速度，GB/s

14.8 10.5

测试中的平均数值
更快的写入速度，GB/s

8.7 8.3

测试中的平均数值

Micron Technology 18ASF1G72PZ-2G1A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1A2 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 49
读取速度，GB/s

14.8 10.5
写入速度，GB/s

8.7 8.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2481 2374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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Kingston 99P5474-014.A00LF 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB