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G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB

G Skill Intl F3-1333C9-4GIS 4GB vs Micron Technology 16ATF2G64AZ-2G6B1 16GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
Micron Technology 16ATF2G64AZ-2G6B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 22
  • 读取速度，GB/s
    12.4 left arrow 18.2
  • 写入速度，GB/s
    7.5 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 3201

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3466C16-8GVK 8GB
G Skill Intl F4-3466C16-8GVK 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-3000C15-8GRKB 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
内存RAM
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMW32GX4M2Z3600C14 16GB
Corsair CMW32GX4M2Z3600C14 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM