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G Skill Intl F3-1333C9-4GIS 4GB
Transcend Information TS1GLH64V4B 8GB

G Skill Intl F3-1333C9-4GIS 4GB vs Transcend Information TS1GLH64V4B 8GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
Transcend Information TS1GLH64V4B 8GB 需要考虑的原因
Transcend Information TS1GLH64V4B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Transcend Information TS1GLH64V4B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 22
  • 读取速度，GB/s
    12.4 left arrow 17.4
  • 写入速度，GB/s
    7.5 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 3036

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Transcend Information TS1GLH64V4B 8GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMD8GX4M2B3000C15 4GB
Corsair CMD8GX4M2B3000C15 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905678-065.A00G 8GB
Kingston 9905678-065.A00G 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kllisre 8GB
Kllisre 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM