Samsung M3 93T5750CZA-CE6 2GB vs Kllisre 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kllisre 8GB

Kllisre 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.7

测试中的平均数值

Kllisre 8GB

需要考虑的原因
Kllisre 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 77

左右 -67% 更低的延时
更快的写入速度，GB/s

8.6 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kllisre 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 46
读取速度，GB/s

3,405.2 11.7
写入速度，GB/s

2,622.0 8.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Kingston HP536727-H41-ELD 4GB

Kingston HP536727-H41-ELD 4GB

G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-2666C15-8GRR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD64GX4M4B3000C15 16GB

Corsair CMD64GX4M4B3000C15 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston HP32D4S2S1ME-8 8GB

Kingston HP32D4S2S1ME-8 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB