Samsung M3 93T5750CZA-CE6 2GB vs Kllisre 8GB

Punteggio complessivo

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Punteggio complessivo

Kllisre 8GB

Kllisre 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 93T5750CZA-CE6 2GB

Motivi da considerare
Samsung M3 93T5750CZA-CE6 2GB

Velocità di lettura più elevata, GB/s

3 11.7

Valore medio nei test

Kllisre 8GB

Motivi da considerare
Kllisre 8GB

Al di sotto della latenza nei test PassMark, ns

46 77

Intorno -67% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.6 2,622.0

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 5300

Intorno 3.21 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 93T5750CZA-CE6 2GB

Kllisre 8GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

77 46
Velocità di lettura, GB/s

3,405.2 11.7
Velocità di scrittura, GB/s

2,622.0 8.6
Larghezza di banda della memoria, mbps

5300 17000

Other

Descrizione

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

763 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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