G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-3600C18-8GTRG 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

G Skill Intl F4-3600C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 -15% 更低的延时
更快的读取速度，GB/s

17.6 17.4

测试中的平均数值
更快的写入速度，GB/s

15.5 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 27
读取速度，GB/s

17.4 17.6
写入速度，GB/s

10.9 15.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F5-5600J4040C16G 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston HP32D4U8S8ME-8XR 8GB

Kingston HP32D4U8S8ME-8XR 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Corsair CMZ8GX3M2A1866C9 4GB

Corsair CMZ8GX3M2A1866C9 4GB

Corsair CMK32GX5M2A4800C40 16GB

Corsair CMK32GX5M2A4800C40 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CM4B8G2J2666A15D 8GB

Corsair CM4B8G2J2666A15D 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB