Samsung M471A5244CB0-CWE 4GB vs Crucial Technology CT8G4DFS832A.M8FJ 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

Crucial Technology CT8G4DFS832A.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFS832A.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的读取速度，GB/s

16.9 15.5

测试中的平均数值
更快的写入速度，GB/s

14.6 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

15.5 16.9
写入速度，GB/s

12.0 14.6
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2283 3316

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 16JTF51264AZ-1G4D1 4GB

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Corsair CMK16GX4M1C3000C16 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

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