Crucial Technology CT51264BD1339.M16F 4GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

报告一个错误

更快的读取速度，GB/s

18 12.1

测试中的平均数值
更快的写入速度，GB/s

15.2 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

12.1 18.0
写入速度，GB/s

8.6 15.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-4000C19-16GTZR 16GB