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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-4000C14-8GTZR 8GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
G Skill Intl F4-4000C14-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4000C14-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    24.7 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.9 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 27
  • 读取速度，GB/s
    17.4 left arrow 24.7
  • 写入速度，GB/s
    10.9 left arrow 19.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 4174

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

G Skill Intl F4-4000C14-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X8GF2666C16K8 8GB
Corsair CM4X8GF2666C16K8 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965662-009.A00G 16GB
Kingston 9965662-009.A00G 16GB
内存RAM