Samsung M3 78T2953EZ3-CF7 1GB vs Avant Technology W6451U67J7240NB 4GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 73

左右 21% 更低的延时
更快的读取速度，GB/s

4 15.1

测试中的平均数值

Avant Technology W6451U67J7240NB 4GB

需要考虑的原因
Avant Technology W6451U67J7240NB 4GB

报告一个错误

更快的写入速度，GB/s

8.1 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Avant Technology W6451U67J7240NB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 73
读取速度，GB/s

4,241.0 15.1
写入速度，GB/s

1,950.7 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 1744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673EH1-CF8 2GB

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Shenzhen Xingmem Technology Corp 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965596-036.B00G 8GB