Crucial Technology CT51264BA1339.C16F 4GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 68

左右 60% 更低的延时
更快的写入速度，GB/s

8.4 8.1

测试中的平均数值

SK Hynix V-GeN D4H4GL26A8TL 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB

报告一个错误

更快的读取速度，GB/s

16.2 13.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 68
读取速度，GB/s

13.9 16.2
写入速度，GB/s

8.4 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 1812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3200C15-16GVK 16GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Kingston 9965640-035.C00G 32GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kllisre 99P54280002.A00LF 8GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Patriot Memory (PDP Systems) PSD416G26662S 16GB

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Samsung M378B5173BH0-CH9 4GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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A-DATA Technology AX4S2800316G18-B 16GB

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Kingston KHX3000C15/16GX 16GB

Kingston KHX3000C15/16GX 16GB