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Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs SK Hynix HMA41GR7MFR8N-TF 8GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
SK Hynix HMA41GR7MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
56
左右 48% 更低的延时
更快的读取速度,GB/s
14.3
10.1
测试中的平均数值
更快的写入速度,GB/s
10.1
8.6
测试中的平均数值
需要考虑的原因
SK Hynix HMA41GR7MFR8N-TF 8GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
56
读取速度,GB/s
14.3
10.1
写入速度,GB/s
10.1
8.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2227
2307
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-2400C15-16GTZR 16GB
Kingston 9905458-017.A01LF 4GB
Kingston ACR26D4S9D8MD-16 16GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK256GX4M8A2400C16 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Kingston 9905403-447.A00LF 4GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G2G1 8GB
G Skill Intl F3-2133C9-4GAB 4GB
DSL Memory D4SS1G082SH21A-B 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL4G24C16U4B.8FB 4GB
报告一个错误
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Bug description
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