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G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
更快的读取速度,GB/s
17.4
13.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
31
左右 -7% 更低的延时
更快的写入速度,GB/s
11.0
10.9
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
29
读取速度,GB/s
17.4
13.8
写入速度,GB/s
10.9
11.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2735
2690
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1B1672EG 2GB
Neo Forza NMUD480E86-3200 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KY7N41-MIE 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Corsair CM2X1024-8500C5D 1GB
Corsair CMSX16GX4M2A2400C16 8GB
Kingston 99U5701-036.A00G 16GB
Kingston 9905744-005.A00G 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Transcend Information TS512MSH64V4H 4GB
Kingston 99U5403-465.A00LF 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMR64GX4M4C3000C15 16GB
Samsung M378B5273DH0-CH9 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Kingston 99U5584-005.A00LF 4GB
Heoriady M471A1K43CB1-CTD 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
A-DATA Technology DDR4 3600 8GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
报告一个错误
×
Bug description
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