G Skill Intl F3-14900CL8-4GBXM 4GB vs Samsung M471A1G43EB1-CRC 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 14.8

测试中的平均数值
更快的写入速度，GB/s

10.9 9.3

测试中的平均数值

Samsung M471A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M471A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 -24% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M471A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 25
读取速度，GB/s

17.4 14.8
写入速度，GB/s

10.9 9.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA82GR7JJR8N-VK 16GB

SK Hynix HMA82GR7JJR8N-VK 16GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Kingston KHX2400C14D4/16G 16GB

Kingston KHX2400C14D4/16G 16GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CM2X2048-6400C5DHX 2GB

Corsair CM2X2048-6400C5DHX 2GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Crucial Technology BLS8G4D240FSB.16FAR 8GB

Crucial Technology BLS8G4D240FSB.16FAR 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB