RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
31
左右 -41% 更低的延时
更快的读取速度,GB/s
17.7
17.4
测试中的平均数值
更快的写入速度,GB/s
12.7
10.9
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
22
读取速度,GB/s
17.4
17.7
写入速度,GB/s
10.9
12.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2735
3075
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA84GR7MFR4N-UH 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
Essencore Limited KD4AGU880-32A160T 16GB
Corsair CMK16GX4M2K4266C16 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Strontium EVMT8G1600U86S 8GB
Transcend Information JM2666HLB-16G 16GB
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMG16GX4M2E3200C16 8GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston KHX2400C14S4/4G 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CM4B16G4J2400A16K2-O 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X16GE2666C16K4 16GB
报告一个错误
×
Bug description
Source link