Nanya Technology M2F4G64CB8HG4N-DI 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Nanya Technology M2F4G64CB8HG4N-DI 4GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG4N-DI 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG4N-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 73

左右 53% 更低的延时
更快的写入速度，GB/s

9.4 7.9

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的读取速度，GB/s

15.1 14.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 73
读取速度，GB/s

14.1 15.1
写入速度，GB/s

9.4 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2340 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Team Group Inc. TEAMGROUP-lnd-2133 8GB

Team Group Inc. TEAMGROUP-lnd-2133 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

Corsair CM2X1024-6400 1GB

Corsair CM2X1024-6400 1GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-2400C16-8GFT 8GB

G Skill Intl F4-2400C16-8GFT 8GB