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Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
比较
Nanya Technology M2F4G64CB8HG4N-DI 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
总分
Nanya Technology M2F4G64CB8HG4N-DI 4GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4G64CB8HG4N-DI 4GB
报告一个错误
低于PassMark测试中的延时,ns
34
73
左右 53% 更低的延时
更快的写入速度,GB/s
9.4
7.9
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
更快的读取速度,GB/s
15.1
14.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
73
读取速度,GB/s
14.1
15.1
写入速度,GB/s
9.4
7.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2340
1724
Nanya Technology M2F4G64CB8HG4N-DI 4GB RAM的比较
Kingston KVT8FP-HYC 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Samsung M471A5244CB0-CWE 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
SK Hynix HMT41GS6AFR8A-PB 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905625-096.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung M378T5663QZ3-CF7 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 9905403-444.A00LF 4GB
Kingston CBD32D4S2D8HD-16 16GB
Micron Technology 36KSF2G72PZ-1G6N1 16GB
Kingston 9965589-035.D00G 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15-8GNS 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3000C15-4GVSB 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
报告一个错误
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Bug description
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