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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
39
左右 28% 更低的延时
更快的写入速度,GB/s
9.6
7.5
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
报告一个错误
更快的读取速度,GB/s
15
12.4
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
39
读取速度,GB/s
12.4
15.0
写入速度,GB/s
9.6
7.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2329
2245
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3333C16-8GVR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston ACR26D4U9S8ME-8X 8GB
AMD R534G1601U1S-UO 4GB
Avant Technology J644GU44J1293NF 32GB
Corsair CML8GX3M2A1866C9 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Golden Empire CL18-20-20 D4-3000 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-2400C17-8GNT 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3733C17-4GVK 4GB
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KHX3000C16D4/16GX 16GB
报告一个错误
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