Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 73

左右 63% 更低的延时
更快的读取速度，GB/s

16.7 15.1

测试中的平均数值
更快的写入速度，GB/s

11.8 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 73
读取速度，GB/s

16.7 15.1
写入速度，GB/s

11.8 7.9
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

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Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

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Kingston HP698651-154-MCN 8GB

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Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3333C16-16GTZB 16GB

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Kingston 9905403-444.A00LF 4GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB