Kingston ACR256X64D3S1333C9 2GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Lexar Co Limited LD4AU008G-H3200GST 8GB

需要考虑的原因
Lexar Co Limited LD4AU008G-H3200GST 8GB

报告一个错误

更快的读取速度，GB/s

19.9 11.9

测试中的平均数值
更快的写入速度，GB/s

13.9 8.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.9 19.9
写入速度，GB/s

8.5 13.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1620 3271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-4GVRB 4GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 8ATF1G64AZ-2G6H1 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Kingston KMKYF9-MID 8GB

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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

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Kingston 9905403-090.A01LF 4GB

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Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

Kingston KHX1600C9S3L/4G 4GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMSX32GX4M1A2666C18 32GB

Corsair CMSX32GX4M1A2666C18 32GB