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G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB vs Crucial Technology BL8G32C16U4W.M8FE1 8GB

总分
star star star star star
G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

总分
star star star star star
Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

差异 规格 评论

差异

G Skill Intl F3-14900CL9-4GBSR 4GB 需要考虑的原因
G Skill Intl F3-14900CL9-4GBSR 4GB
报告一个错误
Crucial Technology BL8G32C16U4W.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4W.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 36
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 10.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 28
  • 读取速度，GB/s
    16.4 left arrow 19.3
  • 写入速度，GB/s
    10.5 left arrow 14.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2618 left arrow 3495

G Skill Intl F3-14900CL9-4GBSR 4GB RAM的比较

G Skill Intl F4-2133C15-4GVR 4GB
Corsair CMU32GX4M4C3466C16 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2800C16-4GRK 4GB
G Skill Intl F4-2800C16-4GRK 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
AMD R7S48G2400U2S 8GB
AMD R7S48G2400U2S 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965662-012.A01G 16GB
Kingston 9965662-012.A01G 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM