G Skill Intl F3-17000CL9-4GBXLD 4GB vs Corsair CMD32GX4M4B3200C16 8GB

总分

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

差异规格评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB

需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 25% 更低的延时

Corsair CMD32GX4M4B3200C16 8GB

需要考虑的原因
Corsair CMD32GX4M4B3200C16 8GB

报告一个错误

更快的读取速度，GB/s

18.6 16

测试中的平均数值
更快的写入速度，GB/s

14.4 11.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-17000CL9-4GBXLD 4GB

Corsair CMD32GX4M4B3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 28
读取速度，GB/s

16.0 18.6
写入速度，GB/s

11.1 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 3566

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston KHX3200C18D4/8G 8GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingston 9905701-011.A00G 16GB

Kingston 9905701-011.A00G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB