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G Skill Intl F3-17000CL9-4GBXLD 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
比较
G Skill Intl F3-17000CL9-4GBXLD 4GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
总分
G Skill Intl F3-17000CL9-4GBXLD 4GB
总分
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
30
左右 30% 更低的延时
更快的写入速度,GB/s
11.1
10.6
测试中的平均数值
需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-17000CL9-4GBXLD 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
21
30
读取速度,GB/s
16.0
16.0
写入速度,GB/s
11.1
10.6
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2581
3026
G Skill Intl F3-17000CL9-4GBXLD 4GB RAM的比较
G Skill Intl F3-17000CL11-4GBXL 4GB
Kingston KHX16LC9/8GX 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
报告一个错误
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Bug description
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