G Skill Intl F3-1866C8-8GTX 8GB vs G Skill Intl F4-3400C16-4GRBD 4GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

更快的读取速度，GB/s

16.8 16.4

测试中的平均数值

G Skill Intl F4-3400C16-4GRBD 4GB

需要考虑的原因
G Skill Intl F4-3400C16-4GRBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 -3% 更低的延时
更快的写入速度，GB/s

15.0 10.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3400C16-4GRBD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 30
读取速度，GB/s

16.8 16.4
写入速度，GB/s

10.8 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2904 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Kingston KHX2666C16/8G 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB

Crucial Technology CT102464BF160B.C16 8GB

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Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB