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Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BLS4G4D26BFSC.8FD2 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Crucial Technology BLS4G4D26BFSC.8FD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 48
    左右 -129% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 21
  • 读取速度，GB/s
    8.9 left arrow 18.7
  • 写入速度，GB/s
    5.9 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 2807

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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