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Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
15.5
测试中的平均数值
更快的写入速度,GB/s
2,168.2
12.8
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
60
左右 -67% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
36
读取速度,GB/s
4,595.2
15.5
写入速度,GB/s
2,168.2
12.8
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
941
3050
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Strontium EVMT8G1600U86S 8GB
Golden Empire CL16-18-18 D4-3400 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMT16GX4M2Z3200C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KHX2666C16/8G 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Crucial Technology CT102464BF160B.C16 8GB
Samsung M471A2K43CB1-CTD 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston KHX1600C9S3L/4G 4GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston HP37D4U1S8ME-8X 8GB
报告一个错误
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Bug description
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