G Skill Intl F3-2400C11-8GSR 8GB vs Mushkin 99[2/7/4]190F 4GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

更快的读取速度，GB/s

16.8 14.1

测试中的平均数值
更快的写入速度，GB/s

11.3 10.7

测试中的平均数值

Mushkin 99[2/7/4]190F 4GB

需要考虑的原因
Mushkin 99[2/7/4]190F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 -31% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Mushkin 99[2/7/4]190F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 26
读取速度，GB/s

16.8 14.1
写入速度，GB/s

11.3 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2968 2679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB