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Samsung 1600 CL10 Series 8GB
Kingston KTP9W1-MIE 16GB

Samsung 1600 CL10 Series 8GB vs Kingston KTP9W1-MIE 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.7
    测试中的平均数值
Kingston KTP9W1-MIE 16GB 需要考虑的原因
Kingston KTP9W1-MIE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.2 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Kingston KTP9W1-MIE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    16.1 left arrow 15.7
  • 写入速度，GB/s
    10.1 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2978

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Kingston KTP9W1-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston 99U5429-014.A00LF 4GB
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内存RAM
Kingston 9965525-155.A00LF 8GB
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内存RAM
Kingston 8ATF1G64AZ-2G1B1 8GB
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Kingston 8ATF1G64HZ-2G3B2 8GB
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Mushkin 991586 2GB
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内存RAM
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Kingston KHX2400C15S4/16G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
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Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
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内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
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内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM