G Skill Intl F3-2400C11-8GSR 8GB vs Samsung M471A1G44AB0-CWE 8GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 32% 更低的延时
更快的读取速度，GB/s

16.8 15.3

测试中的平均数值
更快的写入速度，GB/s

11.3 10.9

测试中的平均数值

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Samsung M471A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 50
读取速度，GB/s

16.8 15.3
写入速度，GB/s

11.3 10.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2968 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F641GU67F9333G 8GB

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Samsung M471A2K43CB1-CTD 16GB

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Kingston HP26D4S9S8MH-8 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905663-012.A00G 16GB

Kingston 9905663-012.A00G 16GB

Samsung M471B5273DH0-CH9 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB